SUNUM offers custom patterned single / multi layer graphene sheets according to customer needs, and also be able to provide transferring graphene onto customer’s substrates, chips and materials.
The graphene grown via the CVD method is transferred onto the wafers then photolithography / e-beam lithography / Dry etching is performed to create micro/nanopatterned graphene shapes in array form.
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm wet / custom height order Dry oxide via PECVD
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm / 1-10 ohm-cm
Type/Dopant: P/Boron
Orientation:<100>
Please consult us for your questions and custom design services or further information.
